IndexBrowse   BibliographiesMy selection
Departamento de Electronica UTFSM
 Search: in   (word length ≥ 3)
       Login
Copyright notice
Publication no #5444   Download bibtex file Type :   Html | Bib | Both
    Created: 2021-07-20 09:16:40
5444 Add to my selection
C.D. Fuentes, M Müller, S. Bernet and S. Kouro. SiC-MOSFET or Si-IGBT: Comparison of Design and Key Characteristics of a 690 V Grid-Tied Industrial Two-Level Voltage Source Converter. In Energies, Vol. 14(11):3054-, June 2021. URL
| WoS
@Article{ID5443,
      AUTHOR = {Fuentes, C.D. and M{\~A}¼ller, M and Bernet, S. and Kouro, S.},
      TITLE = {SiC-MOSFET or Si-IGBT: Comparison of Design and Key Characteristics of a 690 V Grid-Tied Industrial Two-Level Voltage Source Converter},
      YEAR = {2021},
      MONTH = {June},
      JOURNAL = {Energies},
      VOLUME = {14},
      NUMBER = {11},
      PAGES = {3054-},
      URL = {http://dx.doi.org/10.3390/en14113054}
}
WARNING: Copyright and all rights therein are retained by authors or by other copyright holders. IEEE material is subject to Copyright: Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Last modified: Fri March 12 2021 18:39:37